Si_Z O_X N_Y BY INDUCTIVE-COUPLED-PLASMA PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION FOR MULTI-LAYER OPTICAL THIN FILMS
Résumé
The ability to form dielectrics whose linear and nonlinear refractive indexes can be adjusted over a wide range is an enabling
technology for optical thin-films and photonics integrated circuitsand, even more so, when the process is carried out at
low temperatures such as when using Plasma-Enhanced Chemical Vapor Deposition (PECVD) techniques.
In that context, we report here a method to create mixed compounds of silica (SiO2), silicon nitride (SiN) and amorphous
silicon (a-Si) by Inductive-Coupled-Plasma PECVD and demonstrate the use of these alloys to create anti-reflective coatings
and optical mirrors.
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