Si_Z O_X N_Y BY INDUCTIVE-COUPLED-PLASMA PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION FOR MULTI-LAYER OPTICAL THIN FILMS - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Accéder directement au contenu
Poster Année : 2022

Si_Z O_X N_Y BY INDUCTIVE-COUPLED-PLASMA PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION FOR MULTI-LAYER OPTICAL THIN FILMS

Résumé

The ability to form dielectrics whose linear and nonlinear refractive indexes can be adjusted over a wide range is an enabling technology for optical thin-films and photonics integrated circuitsand, even more so, when the process is carried out at low temperatures such as when using Plasma-Enhanced Chemical Vapor Deposition (PECVD) techniques. In that context, we report here a method to create mixed compounds of silica (SiO2), silicon nitride (SiN) and amorphous silicon (a-Si) by Inductive-Coupled-Plasma PECVD and demonstrate the use of these alloys to create anti-reflective coatings and optical mirrors.
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Dates et versions

hal-03948838 , version 1 (20-01-2023)

Identifiants

  • HAL Id : hal-03948838 , version 1

Citer

Stéphane Calvez, Pascal Dubreuil, Mairame Diallo, Emmanuelle Daran, Antoine Monmayrant, et al.. Si_Z O_X N_Y BY INDUCTIVE-COUPLED-PLASMA PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION FOR MULTI-LAYER OPTICAL THIN FILMS. Journées Nationales des Technologies Emergente, Nov 2022, Besançon, France. 2022. ⟨hal-03948838⟩
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