Communication Dans Un Congrès Année : 2025

Experimental Investigation and Behavioral Modeling of the Ron vs. Gate Overshoots Relationship in Schottky p-GaN HEMTs

Résumé

The semi-floating p-GaN layer of commercial schottky HEMTs is suspected to be related to instabilities of the device's electrical characteristics. Particularly, we recently explained how gate voltage spikes at turn-on can cause a drastic, lasting and reproducible dynamic Ron increase. The proposed explanation only partly matched the dynamics of the observed Ron fluctuations and only one device reference was tested. In this work, higher voltage spikes are explored and a device from an other manufacturer is also studied. We demonstrate with a ngspice simulation how all observed dynamic Ron behaviors can be explained with a two-diode model of the gate stack.

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hal-05329882 , version 1 (24-10-2025)

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Ludovic Roche, David Trémouilles, Emmanuel Marcault, Corinne Alonso. Experimental Investigation and Behavioral Modeling of the Ron vs. Gate Overshoots Relationship in Schottky p-GaN HEMTs. 2025 IEEE 12th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Nov 2025, Fayetteville, AR, United States. pp.1-6, ⟨10.1109/WiPDA63755.2025.11303413⟩. ⟨hal-05329882⟩
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