Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Conference Papers Year : 2017

Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect

Abstract

The reduction of the contact resistance RC is one of the most challenging issues related to the miniaturisation of advanced MOSFET architectures, including FDSOI technology (Fully Depleted Silicon-On-Insulator). RC strongly depends on the active dopant concentration at the semiconductor/salicide interface. It is therefore essential that electrical activation at different depths within a doped layer is reliably determined to optimise the fabrication processes. In this paper, we firstly present a Differential Hall Effect (DHE) method which allows measuring the active dopant concentration profile close to the surface with nm resolution for ultra-shallow doped Si1-xGex and Si layers. Then, we present DHE measurements made on junctions processed with advanced techniques, including nsec LTA and msec DSA anneals.
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Dates and versions

hal-01735436 , version 1 (15-03-2018)

Identifiers

  • HAL Id : hal-01735436 , version 1

Cite

Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba, et al.. Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain. ⟨hal-01735436⟩
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