Modeling of microfluidically tuned capacitor for RF applications - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Conference Papers Year : 2018

Modeling of microfluidically tuned capacitor for RF applications

Abstract

This paper presents the modeling of microfluidically tuned capacitor for RF applications. The designed structure is based on performances variations following DI water displacement between capacitor's electrodes. We have modeled the electric field and the current distribution using FEM tool for different DI water position in microchannels. The obtained results at 4.5 GHz show an important variation of electric field and current distribution that impacts the capacitor performances: the capacitance value is comprised between Cmin = 0.11 pF and Cmax = 5.76 pF, the factor value decreases from Qmax = 84.27 to Qmin = 3.99, and the resonant frequency ranges from 5.67 GHz to 19.8 GHz. Indeed, the capacitance variation reaches Tr = 5136% and the broadband ability is higher than 240%.
Fichier principal
Vignette du fichier
Modeling of microfluidically tuned capacitor for RF applications.pdf (498.58 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-01838593 , version 1 (13-07-2018)

Identifiers

  • HAL Id : hal-01838593 , version 1

Cite

Nizar Habbachi, Hatem Boussetta, Mohamed Adel Kallala, Ali Boukabache, Patrick Pons, et al.. Modeling of microfluidically tuned capacitor for RF applications. IEEE International Multi-Conference on Systems, Signals & Devices (SSD'18), Mar 2018, Hammamet, Tunisia. 5p. ⟨hal-01838593⟩
33 View
16 Download

Share

Gmail Facebook X LinkedIn More