Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Conference Papers Year : 2017

Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors

Abstract

We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and "low cost" standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.
Fichier principal
Vignette du fichier
Extended_paper_Transducers2017_Lale_vf.pdf (443.23 Ko) Télécharger le fichier
Origin Files produced by the author(s)
Loading...

Dates and versions

hal-01871397 , version 1 (10-09-2018)

Identifiers

Cite

Ahmet Lale, Auriane Grappin, David Bourrier, Laurent Mazenq, Aurélie Lecestre, et al.. Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors. 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2017), Jun 2017, Kaohsiung, Taiwan. 4p., ⟨10.1109/TRANSDUCERS.2017.7994346⟩. ⟨hal-01871397⟩
36 View
16 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More