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Conference Papers Year : 2019

Investigation of SiC MOSFET channel reverse conduction

Abstract

In this study, forward and reverse conduction of SiC MOSFETs are characterized. These measurements allow us to demonstrate that forward and reverse output characteristics are different, while this was not taken into account in the SPICE model provided by die manufacturers. The difference is due to the body effect within SiC MOSFET and to the shift in threshold voltage. The threshold voltage was characterized as a function of the drain-source voltage VDS. It is shown that VTH decreases a lot when VDS has greater negative values.

Domains

Electronics
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Dates and versions

hal-02613785 , version 1 (15-02-2022)

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Quang Nguyen, Patrick Tounsi, Jean-Pierre Fradin, Jean-Michel Reynes. Investigation of SiC MOSFET channel reverse conduction. 13th International Conference on Power Electronics and Drive Systems (PEDS 2019), Jul 2019, Toulouse, France. ⟨10.1109/PEDS44367.2019.8998901⟩. ⟨hal-02613785⟩
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