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Conference Papers Year : 2020

Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application

Inès Massiot
Thierry Nuns
  • Function : Author
  • PersonId : 1078488
Chantal Fontaine
Guilhem Almuneau

Abstract

This paper reports on the optimization of 1eV dilute nitride solar cells growth conditions. InGaAsN cells were grown by MBE under different conditions (V/III ratio, substrate temperature, surfactant) and were processed without post-growth annealing. Characterization results suggest that the V/III ratio should be kept above 10 and that using Bi as a surfactant does not improve the cell performances. Our best InGaAsN cells exhibit Jsc and Voc values of 7.9 mA/cm 2 and 0.375 V respectively, under AM0> 870 nm and without ARC.
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Dates and versions

hal-03012129 , version 1 (18-11-2020)

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Maxime Levillayer, Sophie Duzellier, Hélène Carrère, Inès Massiot, Thierry Nuns, et al.. Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application. 47th IEEE Photovoltaic Specialists Conference (PVSC 47), IEEE, Jun 2020, Calgary (virtual), Canada. ⟨10.1109/PVSC45281.2020.9300570⟩. ⟨hal-03012129⟩
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