Extraction of compact transient thermal models for a global optimization of a power system based on SiC MOSFETs switches - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Conference Papers Year : 2020

Extraction of compact transient thermal models for a global optimization of a power system based on SiC MOSFETs switches

Abstract

This paper deals with the interest of compact transient thermal models in the optimization of power converting system. These models have to take into account thermal coupling effects between the different chips of a power module based on SiC MOSFETs. The developed models are easily implementable within simulation tools such as Modelica. We will show that for applications operating at low duty cycle or with fast varying power demand, the consideration of transient models could improve a global optimal design by lightening the system. This approach also ensures that the junction temperatures do not exceed their limit values.
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Dates and versions

hal-03655834 , version 1 (30-04-2022)

Identifiers

  • HAL Id : hal-03655834 , version 1

Cite

Anaïs Cassou, Quang Chuc Nguyen, Patrick Tounsi, Jean-Pierre Fradin, Marc Budinger, et al.. Extraction of compact transient thermal models for a global optimization of a power system based on SiC MOSFETs switches. 26th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC 2020), Sep 2020, Berlin, Germany. ⟨hal-03655834⟩
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