Development of all-around, SiO2/Al2O3 gate, suspended silicon nanowire chemical field effect transistors Si-nw-ChemFET
Résumé
We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and " low cost " standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.
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