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Journal Articles IEEE Transactions on Nuclear Science Year : 2021

Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation

I. Massiot
Thierry Nuns
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  • PersonId : 1078488
François Olivié
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  • PersonId : 831039
Guilhem Almuneau

Abstract

The degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94 % of their original photocurrent after 10 15 cm-2 1 MeV-electrons irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.
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hal-03012605 , version 1 (18-11-2020)

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Maxime Levillayer, Sophie Duzellier, I. Massiot, Thierry Nuns, Christophe Inguimbert, et al.. Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation. IEEE Transactions on Nuclear Science, 2021, 68 (8), pp.1694 - 1700. ⟨10.1109/TNS.2021.3068044⟩. ⟨hal-03012605⟩
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