Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Book Section Year : 2021
No file

Dates and versions

hal-03341171 , version 1 (10-09-2021)

Identifiers

  • HAL Id : hal-03341171 , version 1

Cite

Ray Duffy, Enrico Napolitani, Fuccio Cristiano. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors. Laser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555. ⟨hal-03341171⟩
6 View
0 Download

Share

Gmail Facebook X LinkedIn More