Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes
Chapitre D'ouvrage Année : 2021

Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors

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Micro et nanotechnologies/Microélectronique Science des matériaux [cond-mat.mtrl-sci]

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Soumis le : vendredi 10 septembre 2021-15:19:47

Dernière modification le : lundi 20 novembre 2023-11:44:22

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hal-03341171 , version 1 (10-09-2021)

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  • HAL Id : hal-03341171 , version 1

Citer

Ray Duffy, Enrico Napolitani, Fuccio Cristiano. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors. Laser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555. ⟨hal-03341171⟩

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